Growth and characterization of single quantum dots emitting at 1300 nm

Experimental and Theoretical Study of Polarization-Dependent Optical Transitions in InAs Quantum Dots at Telecommunication-Wavelengths (1300-1500 nm)

The design of some optical devices, such as semiconductor optical amplifiers for telecommunication applications, requires polarization-insensitive optical emission at long wavelengths (1300–1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emissions at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this ca...

Structural and Optical Characterization of ZnO-Graphene Nanocomposite Quantum Dots

In this research, zinc oxide quantum dots and graphene nanocomposites were synthesized via two different methods; In the first (direct) method, ZnO-graphene Nanocomposites were made mixing the synthesized zinc oxide and graphene. In the second (indirect) method, zinc nitrate, graphene, and sodium hydroxide were used to made ZnO-graphene Nanocomposites. XRD, FTIR and Raman spectroscopy analyses ...

1300 nm optically pumped quantum dot spin vertical external-cavity surface-emitting laser

Realization of quantum dots emitting at 1.55μm for single- photon emitters

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Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths

Luca Sapienza,1,* Rima Al-Khuzheyri,2 Adetunmise Dada,2 Andrew Griffiths,3 Edmund Clarke,3 and Brian D. Gerardot2 1Department of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom 2Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, United Kingdom 3EPSRC National Centre for III-V Technologies, University of Sheffield, United ...